features i o 1.5a vrrm 50v-1000v high surge current capability applications : from 005 to 10 xx marking polarity: color band denotes cathode k bpxx 1 h igh diode semiconductor kbp plastic-encapsulate bridge rectifier general pu rp ose 1 phase bridge rectifier applications k bp kb p 005 thru kb p 10 item symbol unit conditions kb p re p etitive p ea k reverse v oltage v rrm v 50 100 200 400 600 800 1000 a ver a ge rectif i ed output cur r ent i o a 60 h z sine w a ve, r - load, t a = 3 0 1.5 surge ( non - r e p e titive) f o r w a r d current i fsm a 6 0 h z s i ne w av e , 1 c y c l e, t a = 2 5 50 current s q ua r e d t ime i 2 t a 2 s 1mst 8.3ms t j = 2 5 , r a t i ng of per d i o d e 26.5 s torage t e mp e rature t stg - 55 ~+150 juncti o n t e mperature t j - 55 ~+150 electrical characteristics t a =25 unl e ss otherwise specified item symbol unit test condition max peak f o r w a r d v o l t age v fm v i fm = 1.5 a, pulse measu r eme n t, rating of per dio d e 1. 1 peak re v e rse current i rrm a v rm =v rrm , pu l se measu r em e n t, rating of p e r dio d e 10 t hermal resis t ance (1) r j - a / w be t w ee n j u nct i on a n d am b ie n t 20 r j - l be t w ee n j u nct i on a n d l e ad 11 notes : 1 thermal res istance from junction to ambient and from junction to lead mounted on p.c.b. with 0.470.47(1212mm) copper pads 005 01 02 04 06 07 08 10 700
typical characteristics 2 h igh diode semiconductor 0.4 0.6 0.8 1.0 1.2 1.4 0.1 0.2 0.5 vf(v) if(a) fig3:instantaneous forward voltage 1.0 10 20 40 60 5.0 0 20 40 60 80 100 0.01 0.1 1.0 10 100 voltage(%) ir(ua) tj=125 tj=25 fig4:typical reverse characteristics io(a) ta( ) fig1:io-ta curve 0 0.5 0 50 150 100 1.0 1.5 2.0 1 20 ifsm(a) 2 5 10 20 50 100 45 fig2:surge forward current capadility number of cycles 25 30 35 40 50 55
3 h igh diode semiconductor k bp dimensions in inches and (millimeters) + ac - .457(11.6) .434(11.0) .500(12.7) min .053(1.35) .043(1.10) .035(0.90) .028(0.70) .160(4.10) .140(3.60) spacing .158(4.01) .130(3.31) .590(15.0) .567(14.4)
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